Title :
On the suitability of non-hardened high density SRAMs for space applications
Author :
Koga, R. ; Crain, W.R. ; Crawford, K.B. ; Lau, D.D. ; Pinkerton, S.D. ; Yi, B.K. ; Chitty, R.
Author_Institution :
Space & Environment Technol. Center, Aerospace Corp., El Segundo, CA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Several non-radiation-hardened high-density static RAMs (SRAMs) were tested for susceptibility to single event upset (SEU) and latchup. Test results indicate that at present only a few such device types are suitable for use in space applications. Several additional factors such as susceptibility to multiple-bit upsets and to radiation induced permanent damage need to be taken into consideration before these device types can be recommended. One nonhardened SRAM device type has recently been used on a low-Earth-orbit satellite, enabling the upset rate measured in space to be compared to that predicted from ground-based testing
Keywords :
CMOS integrated circuits; MOS integrated circuits; SRAM chips; aerospace instrumentation; environmental testing; integrated circuit testing; ion beam effects; 256 kbit; CMOS; LET values; NMOS; SEU susceptibility; SRAM testing; ion beam irradiation; latchup susceptibility; low-Earth-orbit satellite; multiple-bit upsets; nonradiation hardened high density SRAMs; radiation induced permanent damage; space applications; upset rate; Automatic testing; Computer errors; Costs; Extraterrestrial measurements; Particle beams; Random access memory; Read-write memory; Satellites; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
