• DocumentCode
    817880
  • Title

    Wafer-level radiation testing for hardness assurance

  • Author

    Shaneyfelt, M.R. ; Hughes, K.L. ; Schwank, J.R. ; Sexton, F.W. ; Fleetwood, D.M. ; Winokur, P.S. ; Enlow, E.W.

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1598
  • Lastpage
    1605
  • Abstract
    To implement the qualified manufacturers list (QML) approach to hardness assurance in a practical and cost-effective manner, one must identify technology parameters that affect radiation hardness and bring them under statistical process control. To aid this effort, the authors have developed a wafer-level test system to map test-structure and IC response across a wafer. This system permits current-voltage and charge-pumping measurements on transistors, and high-frequency capacitance-voltage measurements on capacitors. For frequencies up to 50 MHz, the system provides a complete menu of functional and parametric IC tests. Wafer maps and histograms of test-structure and IC response are presented for a 1.2-μm radiation-hardened CMOS technology to illustrate the capabilities of the wafer-level test system. Statistical and deterministic approaches to correlate test structure and IC response are discussed for this technology
  • Keywords
    CMOS integrated circuits; integrated circuit testing; production testing; radiation hardening (electronics); charge-pumping measurements; hardness assurance; high-frequency capacitance-voltage measurements; parametric IC tests; qualified manufacturers list; radiation hardness; radiation-hardened CMOS technology; statistical process control; technology parameters; wafer-level test system; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Charge pumps; Current measurement; Integrated circuit testing; Manufacturing processes; Process control; System testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.124151
  • Filename
    124151