DocumentCode
817880
Title
Wafer-level radiation testing for hardness assurance
Author
Shaneyfelt, M.R. ; Hughes, K.L. ; Schwank, J.R. ; Sexton, F.W. ; Fleetwood, D.M. ; Winokur, P.S. ; Enlow, E.W.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
38
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1598
Lastpage
1605
Abstract
To implement the qualified manufacturers list (QML) approach to hardness assurance in a practical and cost-effective manner, one must identify technology parameters that affect radiation hardness and bring them under statistical process control. To aid this effort, the authors have developed a wafer-level test system to map test-structure and IC response across a wafer. This system permits current-voltage and charge-pumping measurements on transistors, and high-frequency capacitance-voltage measurements on capacitors. For frequencies up to 50 MHz, the system provides a complete menu of functional and parametric IC tests. Wafer maps and histograms of test-structure and IC response are presented for a 1.2-μm radiation-hardened CMOS technology to illustrate the capabilities of the wafer-level test system. Statistical and deterministic approaches to correlate test structure and IC response are discussed for this technology
Keywords
CMOS integrated circuits; integrated circuit testing; production testing; radiation hardening (electronics); charge-pumping measurements; hardness assurance; high-frequency capacitance-voltage measurements; parametric IC tests; qualified manufacturers list; radiation hardness; radiation-hardened CMOS technology; statistical process control; technology parameters; wafer-level test system; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Charge pumps; Current measurement; Integrated circuit testing; Manufacturing processes; Process control; System testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.124151
Filename
124151
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