DocumentCode :
817975
Title :
Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 
m
Author :
Valdueza-Felip, S. ; Naranjo, F.B. ; González-Herráez, M. ; Fernández, H. ; Solis, J. ; Guillot, F. ; Monroy, E. ; Nevou, L. ; Tchernycheva, M. ; Julien, F.H.
Author_Institution :
Grupo de Ing. Fotonica (GRIFO), Univ. de Alcala, Madrid
Volume :
20
Issue :
16
fYear :
2008
Firstpage :
1366
Lastpage :
1368
Abstract :
We report on the third-order optical nonlinearity of the e 1 -e 2 intersubband transition in GaN-AlN quantum wells and the s-p z intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mum. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; nanostructured materials; nonlinear optical susceptibility; semiconductor quantum dots; semiconductor quantum wells; silicon; FWM; GaN-AlN:Si; Kerr effects; four-wave mixing; intersubband transition; intraband transition; nanostructures; nitride-based devices; optical switching; photonic signal processing; quantum dots; resonant third-order nonlinear susceptibility; silicon-doped quantum wells; wavelength 1.5 mum; wavelength conversion applications; Fiber nonlinear optics; Nonlinear optical devices; Nonlinear optics; Optical mixing; Optical signal processing; Optical waveguides; Optical wavelength conversion; Quantum dots; Resonance; Ultrafast optics; Four-wave mixing (FWM); Kerr effects; nitride-based devices; photonic signal processing; third-order susceptibility;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.926842
Filename :
4579335
Link To Document :
