Title :
Comparison of heavy ion and proton induced combinatorial and sequential logic error rates in a deep submicron process
Author :
Gadlage, Matthew J. ; Eaton, Paul H. ; Benedetto, Joseph M. ; Turflinger, Thomas L.
Author_Institution :
NAVSEA, Crane, IN, USA
Abstract :
Digital single event transients induced in combinatorial logic are quickly becoming a significant error source as circuit feature sizes shrink and digital circuits operate faster. In this paper, we are able to compare the combinatorial logic error rate to the sequential logic error rate in both heavy ion and proton environments in a simple digital circuit created in a 0.18 μm CMOS technology. We are able to do this by comparing data from two unique test chips.
Keywords :
CMOS digital integrated circuits; combinational circuits; ion beam effects; proton effects; sequential circuits; 0.18 micron; CMOS technology; combinational logic circuits; deep submicron process; digital circuits; digital single event transients; error source; heavy ion radiation effects; proton induced combinatorial logic error rate; proton induced sequential logic error rates; proton radiation effects; sequential logic circuits; CMOS logic circuits; CMOS technology; Clocks; Error analysis; Flip-flops; Frequency; Latches; Protons; Sequential circuits; Testing; Combinational logic circuits; ion radiation effects; proton radiation effects; sequential logic circuits;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860678
