Title :
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
Author :
Warren, Kevin M. ; Weller, Robert A. ; Mendenhall, Marcus H. ; Reed, Robert A. ; Ball, Dennis R. ; Howe, Christina L. ; Olson, Brian D. ; Alles, Michael L. ; Massengill, Lloyd W. ; Schrimpf, Ronald D. ; Haddad, Nadim F. ; Doyle, Scott E. ; McMorrow, Dale
Author_Institution :
Inst. for Space & Defense Electron., Nashville, TN, USA
Abstract :
Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results show that materials external to the sensitive volume can affect the experimentally measured cross-section curve.
Keywords :
Monte Carlo methods; SRAM chips; ion beam effects; radiation hardening (electronics); semiconductor device models; Geant4 based Monte-Carlo transport code; MRED; charge deposition; electronic physics; heavy ion irradiation; heavy ion single event upset cross-section measurements; high-density SEU hardened SRAM; nuclear physics; nuclear reactions; statistical profiles; Circuits; Discrete event simulation; Energy measurement; Ionization; Laboratories; Nuclear electronics; Nuclear physics; Nuclear power generation; Random access memory; Single event upset; Cross section; Geant4; MRED; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860677
