Title :
Characteristics of In0.425Al0.575As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels
Author :
Hsu, Wei-Chou ; Chen, Yeong-Jia ; Lee, Ching-Sung ; Wang, Tzong-Bin ; Huang, Jun-Chin ; Huang, Dong-Hai ; Su, Ke-Hua ; Lin, Yu-Shyan ; Wu, Chang-Luen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
In0.425Al0.575As-InxGa1-xAs metamorphic high electron mobility transistors (MHEMTs) with two different channel designs, grown by molecular beam epitaxy (MBE) system, have been successfully investigated. Comprehensive dc and high-frequency characteristics, including the extrinsic transconductance, current driving capability, device linearity, pinch-off property, gate-voltage swing, breakdown performance, unity-gain cutoff frequency, max. oscillation frequency, output power, and power gain, etc., have been characterized and compared. In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the pseudomorphic channel MHEMT (PC-MHEMT) and the V-shaped symmetrically graded channel MHEMT (SGC-MHEMT), respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; In0.425Al0.575As-InGaAs; breakdown performance; channel designs; current driving capability; dc characteristics; device linearity; extrinsic transconductance; gate-voltage swing; high-frequency characteristics; maximum oscillation frequency; metamorphic HEMT; molecular beam epitaxy; output power; pinch-off property; power gain; pseudomorphic channels; small-signal device model; symmetrically graded channels; unity-gain cutoff frequency; Cutoff frequency; Electric breakdown; HEMTs; Linearity; MODFETs; Molecular beam epitaxial growth; Performance gain; Power generation; Transconductance; mHEMTs; MHEMT; PC-MHEMT; SGC-MHEMT; V-shaped symmetrically graded channel; small-signal model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.848863
