Title :
Dynamic current-voltage characteristics of III-N HFETs
Author :
Koudymov, A. ; Simin, G. ; Khan, M. Asif ; Tarakji, A. ; Gaska, R. ; Shur, M.S.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
A comparative study of the dynamic current-voltage (DI-V) characteristics of III-N heterojunction and double heterojunction field-effect transistors (HFETs and DHFETs) reveals that the current and RF power collapse in HFETs arise from modulation of device series resistances under large input signal. A model based on space-charge limited current through the depletion regions formed at the gate edges due to the charge trapping explains the DI-V behavior and other observations related to the RF current collapse in III-N HFETs.
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; space-charge-limited conduction; wide band gap semiconductors; AlGaN-InGaN-GaN; GaN-AlGaN; HEMTs; III-N HFETs; RF power collapse; charge trapping; current collapse; depletion regions; double heterojunction field-effect transistors; dynamic current-voltage characteristics; large input signal; series resistance modulation; space-charge limited current; Aluminum gallium nitride; Current-voltage characteristics; DH-HEMTs; Electron traps; Gallium nitride; HEMTs; MODFETs; Monitoring; Radio frequency; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.818889
