A concept of SOI RESURF lateral devices with striped trench electrodes

This paper presents a concept of silicon-on insulator lateral devices based on a reduced surface field (RESURF) principle by striped trench electrodes formed along the current flow direction. These trench electrodes reduce the electric field at the pn junctions sandwiched between the electrodes. We experimentally applied this RESURF technology to a conventional pn^- lateral diode. As a result, the breakdown voltage was increased from 56 to 104 V without varying the impurity concentration and the length of the n^- region. This means that the RESURF effect was achieved with the striped trench electrodes. The LDMOS with this RESURF technology was evaluated by simulations. This would be available for 80-V class lateral MOSFETs, used in the forthcoming 42-V automotive systems.