Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs

Author

Hayama, Kiyoteru ; Takakura, Kenichiro ; Ohyama, Hidenori ; Rafí, Joan Marc ; Simoen, Eddy ; Mercha, Abdelkarim ; Claeys, Cor

Author_Institution

Kumamoto Nat. Coll. of Technol., Japan

Volume

52

Issue

6

fYear

2005

Firstpage

2392

Lastpage

2397

Abstract

The degradation of deep submicrometer (0.1 μm) fully depleted silicon-on-insulator n-MOSFETs subjected to 2-MeV electron irradiation at different temperatures is reported. The radiation-induced damage is investigated by studying the static characteristics of devices with different geometries and bias conditions. The change of the front and back-channel parameters, the impact of the gate coupling effect and the gate-induced floating body effects and the irradiation temperature dependence of these degradations are clarified. It is found that the degradation of the electrical properties tends to be small for high temperature irradiation compared with that for room temperature.

Keywords

MOSFET; electron beam effects; silicon-on-insulator; thin film transistors; 2 MeV; electrical properties degradation; gate coupling effect; gate-induced floating body effect; high-temperature electron irradiation; radiation-induced damage; room temperature; thin gate oxide fully depleted silicon-on-insulator n-MOSFETs; Degradation; Electrons; Geometry; Immune system; Ionization; MOSFET circuits; Semiconductor films; Silicon on insulator technology; Temperature dependence; Testing; Electron irradiation; MOSFET; fully depleted silicon-on-insulator (FD-SOI); gate coupling; high-temperature irradiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860729

Filename

1589213