Title :
Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption
Author :
McMorrow, Dale ; Lotshaw, William T. ; Melinger, Joseph S. ; Buchner, Stephen ; Davis, John D. ; Lawrence, Reed K. ; Bowman, James H. ; Brown, Ron D. ; Carlton, Dave ; Pena, Joseph ; Vasquez, Juan ; Haddad, Nadim ; Warren, Kevin ; Massengill, Lloyd
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The single-event upset response of a single-event hardened SRAM 10-transistor cell is mapped in two dimensions via carrier injection by two-photon absorption through the back (substrate) surface in a flip-chip mounted 4 Mb SRAM. Using through-wafer carrier injection, charge is deposited into the active regions of the device at well-defined locations in a reproducible manner, and the single-event upset sensitive region of the device is localized to within ±0.3 micrometers.
Keywords :
SRAM chips; charge injection; flip-chip devices; radiation hardening (electronics); two-photon processes; 4 Mbit; flip-chip SRAM; single-event hardened SRAM transistor cell; single-event upset; through-wafer carrier injection; two-photon absorption; Absorption; Laser beams; Optical pulse generation; Packaging; Power lasers; Random access memory; Semiconductor lasers; Substrates; Testing; Ultrafast optics; Laser SEE; SEE; SEU; SRAM; nonlinear absorption; silicon; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860673
