Title :
Radiation-induced multi-bit upsets in SRAM-based FPGAs
Author :
Quinn, Heather ; Graham, Paul ; Krone, Jim ; Caffrey, Michael ; Rezgui, Sana
Author_Institution :
Space Data Syst., Los Alamos Nat. Lab., NM, USA
Abstract :
This paper provides a methodology for estimating the proton and heavy ion static saturation cross-sections for multi-bit upsets (MBUs) in Xilinx field-programmable gate arrays and describes a methodology for determining MBUs´ effects on triple-modular redundancy protected circuits. Experimental results are provided.
Keywords :
SRAM chips; field programmable gate arrays; proton effects; SRAM-based FPGA; Xilinx field-programmable gate arrays; heavy ion static saturation cross-sections; proton ion static saturation cross-sections; radiation-induced multibit upsets; triple-modular redundancy protected circuits; CMOS technology; Circuits; Costs; Field programmable gate arrays; Frequency; Hardware; Laboratories; Protection; Protons; Testing; Heavy ions; field programmable gate arrays; proton radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860742
