Title :
Highly reliable nitride-based LEDs with SPS+ITO upper contacts
Author :
Chang, S.J. ; Chang, C.S. ; Su, Y.K. ; Chuang, R.W. ; Lin, Y.C. ; Shei, S.C. ; Lo, H.M. ; Lin, H.Y. ; Ke, J.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan
Abstract :
Nitride-based blue light emitting diodes (LEDs) with an n+-short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/Au upper contacts, it was found that we could achieve a 60% increase in electroluminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.
Keywords :
III-V semiconductors; electrical contacts; electroluminescence; gallium compounds; indium compounds; leakage currents; life testing; light emitting diodes; quantum well devices; semiconductor quantum wells; semiconductor superlattices; tin compounds; wide band gap semiconductors; ITO; InGaN-GaN; InGaN-GaN multiquantum-well LED samples; InSnO; SPS-ITO upper contacts; SiO2; SiO2 layer deposition; electroluminescence intensity; highly reliable nitride-based LED; indium tin oxide transparent contact; lifetime; n+-short period superlattice tunnel contact layer; nitride-based blue light emitting diodes; smaller reverse leakage current; Automotive materials; Gallium nitride; Gold; Indium tin oxide; Light emitting diodes; MOCVD; Ohmic contacts; Optical materials; Quantum well devices; Superlattices;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.818312
