Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables

Author

Crupi, Giovanni ; Schreurs, Dominique M M P ; Xiao, Dongping ; Caddemi, Alina ; Parvais, Bertrand ; Mercha, Abdelkarim ; Decoutere, Stefaan

Author_Institution

Messina Univ.

Volume

17

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

361

Lastpage

363

Abstract

The Fin field effect transistor (FinFET) is a multiple gate structure, which is recently emerging as a leading structure to continue the scaling of CMOS technology into the nanometer regime. This promising multiple gate structure has not only the advantage of reducing short channel effects but also of being compatible with the conventional planar CMOS technology. To our knowledge, this is the first letter addressing the nonlinear FinFET model validated by large signal network analyzer measurements. Here, we present a nonlinear FinFET model which is based on lookup tables. The accuracy of the developed model is completely and successfully verified through the comparison with nonlinear FinFET measurements

Keywords

MOSFET; network analysers; semiconductor device models; table lookup; Fin field effect transistor; large signal network analyzer measurements; lookup tables; multiple gate structure; nonlinear FinFET model; nonlinear model; planar CMOS technology; CMOS technology; Equivalent circuits; FETs; FinFETs; HEMTs; MODFETs; Predictive models; Semiconductor device modeling; Signal analysis; Table lookup; Fin field effect transistor (FinFET); large signal measurements; lookup table; multiple gate structure; nonlinear model;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.895711

Filename

4167914