A Novel SiGe PIN Diode SPST Switch for Broadband T/R Module

Author

Sun, Pinping ; Upadhyaya, Parag ; Jeong, Dong-Ho ; Heo, Deukhyoun ; La Rue, George S.

Author_Institution

Sch. of Electr. Eng., Washington State Univ., Pullman, WA

Volume

17

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

352

Lastpage

354

Abstract

A novel octagonal SiGe p-type intrinsic n-type (PIN) diode single pole single throw (SPST) switch is first implemented in a standard 0.18-mum SiGe BiCMOS technology. Distinctive radio frequency performance of monolithic silicon PIN diode switch is achieved for broadband applications with improvement of its geometry. Over the 2-16GHz frequency band, the PIN diode SPST switch exhibits an insertion loss of less than 1dB and isolation between 42dB to 19dB. An accurate small signal model of series PIN diode is also presented

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF diodes; UHF integrated circuits; elemental semiconductors; microwave diodes; microwave integrated circuits; p-i-n diodes; semiconductor switches; transceivers; 0.18 micron; 2 to 16 GHz; BiCMOS technology; PIN diode; SOC; SPST switch; SiGe; broadband T/R module; monolithic silicon diode switch; p-type intrinsic n-type diode; phased array communication systems; single pole single throw switch; small signal model; system-on-chip; transmit/receive module; Anodes; BiCMOS integrated circuits; CMOS technology; Cathodes; Costs; Germanium silicon alloys; Parasitic capacitance; Phased arrays; Silicon germanium; Switches; Diode; PIN diode; SiGe BiCMOS system-on-chip (SOC); phased array communication systems; transmit/receive (T/R) module;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.895706

Filename

4167937