Title :
Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
Author :
Yang, C.W. ; Fang, Y.K. ; Lin, C.S. ; Tsair, Y.S. ; Chen, S.M. ; Wang, W.D. ; Wang, M.F. ; Cheng, J.Y. ; Chen, C.H. ; Yao, L.G. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH3, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO2 gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at Vdd=2 V.
Keywords :
MOSFET; dielectric thin films; hafnium compounds; leakage currents; nitridation; permittivity; semiconductor device breakdown; silicon compounds; 10 y; Hf-doped gate dielectric; HfSiON; HfSiON high-K dielectric; HfSiON lifetime; NH3; NH3-nitrided gate dielectric; NMOSFETs; base oxide doping; drain current degradation; flatband voltage shift; gate leakage reduction; high-K gate dielectric thin film; nitridation; time-dependent dielectric breakdown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030988
