• DocumentCode
    820041
  • Title

    Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs

  • Author

    Verzellesi, G. ; Basile, A. ; Mazzanti, A. ; Cavallini, A. ; Canali, C.

  • Author_Institution
    Dipt. di Ingegneria dell´´Informazione, Univ. di Modena, Italy
  • Volume
    39
  • Issue
    21
  • fYear
    2003
  • Firstpage
    1548
  • Lastpage
    1549
  • Abstract
    Results are presented from gate-lag, transconductance (gm) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.
  • Keywords
    III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; electron traps; field effect transistors; gallium arsenide; AlGaAs-GaAs; AlGaAs-GaAs HFETs; DC-to-RF dispersion effects; I-DLTS experiments; current deep level transient spectroscopy; deep-level traps; energetic localisation; gate-lag transconductance frequency dispersion; heterostructure FETs; heterostructure field-effect transistors; spatial localisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030950
  • Filename
    1242824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=820041