• DocumentCode
    82023
  • Title

    Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrOx Dielectric After DPN Process Accompanying Nitrogen Concentrations

  • Author

    Win-Der Lee ; Mu-Chun Wang ; Shea-Jue Wang ; Wen-How Lan ; Chao-Wang Li ; Bor-Wen Yang

  • Author_Institution
    Dept. of Electr. Eng., Lee-Ming Inst. of Technol., Taipei, Taiwan
  • Volume
    42
  • Issue
    12
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3747
  • Lastpage
    3750
  • Abstract
    The model of the Early effect at nanonode devices should be modified owing to the unignored contribution of vertical gate field. This effect is more obvious when the channel length is decreased more. Using higher decoupled plasma nitridation nitrogen treatment after high-k dielectric deposition, besides enhancing the drive current due to promoting the microscopic homogeneity of the Hf-based film, seems also to little suppress the Early effect. This phenomenon at L = 0.03 μm device is proved and due to the lower β-slope of influencing the high-vertical field.
  • Keywords
    MOSFET; dielectric materials; hafnium compounds; nitridation; nitrogen; plasma applications; DPN process; HfZrOx; N; channel length; decoupled plasma nitridation nitrogen treatment; drive current; early effect; high-k dielectric deposition; microscopic homogeneity; nMOSFET; nanonode devices; nitrogen concentrations; size 28 nm; vertical gate field; Annealing; Dielectrics; High K dielectric materials; Logic gates; MOSFET; Metals; Plasmas; Decoupled plasma nitridation (DPN); Early effect; MOSFET; high- $k$ (HK) dielectric; high-k (HK) dielectric; model;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2014.2357024
  • Filename
    6908019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=82023