Radiation Effects on Bipolar Integrated Injection Logic

Integrated Injection Logic (I2 L) is a new highdensity, low power bipolar LSI technology that offers major performance advantages over other bipolar and MOS/LSI technologies. Results are presented on the experimentally-determined radiation sus ceptibility of developmental unhardened I2L LSI logic cells in terms of neutron-induced displacement damage, ionizing - dose-induced surface effects and transient photoresponse.