DocumentCode
821340
Title
Design of CNTFET-based reconfigurable logic gate
Author
Liu, J. ; Connor, I.O. ; Navarro, D. ; Gaffiot, F.
Author_Institution
Inst. des Nanotechnol. de Lyon, CNRS UMR, Ecully
Volume
43
Issue
9
fYear
2007
Firstpage
514
Lastpage
516
Abstract
Described is a dynamically reconfigurable 8-function logic gate with seven double-gate carbon nanotube field-effect transistors which demonstrates p-type or n-type behaviour depending on the back-gate voltage. Through simulations, the gate is shown to operate at 20 GHz and has been used to build a 1-bit pipelined full adder using physically identical reconfigurable cells
Keywords
carbon nanotubes; field effect MMIC; logic gates; microwave field effect transistors; nanotube devices; 20 GHz; CNTFET; back gate voltage; carbon nanotube; double gate; field effect transistors; n-type behaviour; p-type behaviour; reconfigurable cells; reconfigurable logic gate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:2007041
Filename
4168489
Link To Document