• DocumentCode
    821340
  • Title

    Design of CNTFET-based reconfigurable logic gate

  • Author

    Liu, J. ; Connor, I.O. ; Navarro, D. ; Gaffiot, F.

  • Author_Institution
    Inst. des Nanotechnol. de Lyon, CNRS UMR, Ecully
  • Volume
    43
  • Issue
    9
  • fYear
    2007
  • Firstpage
    514
  • Lastpage
    516
  • Abstract
    Described is a dynamically reconfigurable 8-function logic gate with seven double-gate carbon nanotube field-effect transistors which demonstrates p-type or n-type behaviour depending on the back-gate voltage. Through simulations, the gate is shown to operate at 20 GHz and has been used to build a 1-bit pipelined full adder using physically identical reconfigurable cells
  • Keywords
    carbon nanotubes; field effect MMIC; logic gates; microwave field effect transistors; nanotube devices; 20 GHz; CNTFET; back gate voltage; carbon nanotube; double gate; field effect transistors; n-type behaviour; p-type behaviour; reconfigurable cells; reconfigurable logic gate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:2007041
  • Filename
    4168489