Investigation of JI and DI CMOS FXR Response at Different Spectral Energies

The transient response of both junction isolated (JI) and dielectrically isolated (DI) CMOS circuits has been investigated in three FXR environments of differing energy spectrums. The offset recovery times have been measured and analyzed for both structures. It is shown that while the DI circuit (HD4007) did not exhibit a four layer type latchup action, its transient response persisted for a time longer than is expected for this type of device. A possible mechanism for this observed response is developed and discussed. JI circuits (CD4007) exposed under the same conditions exhibited four layer device action and one sample at low spectral energies latched-up. The conditions for the latchup to occur including the four layer device paths are discussed. Finally, the dependence of the x-ray transient response on the spectral energy is considered. For the lower energy FXR source, latchup was observed in a CD4007 sample. This latchup was not observed at more than double the dose rate when a high energy FXR was used. This result is attributed to dose enhancement, and a device enhancement factor may also be involved. The dose enhancement factor is estimated from the work of Long, and points up the importance of accounting for the spectral energy content in simulating a given nuclear threat spectrum.