• DocumentCode
    821518
  • Title

    Hybrid nanocrystal FinFET with large P/E window for MLC NAND Flash memory application

  • Author

    Choe, J.-D. ; Ahn, Y.J. ; Lee, S.-H. ; Jang, D. ; Yoon, Y.-B. ; Lee, J.J. ; Chung, I. ; Park, D. ; Park, DaeLim

  • Author_Institution
    Adv. Technol. Dev. Team, Samsung Electron. Co., Yongin-City Kyungki-Do
  • Volume
    43
  • Issue
    9
  • fYear
    2007
  • Firstpage
    545
  • Lastpage
    546
  • Abstract
    The engineered trap layer with nanocrystal and high-k blocking oxide are applied to the FinFET structure. The increased trap density of the hybrid nanocrystal trap layer and the enhanced leakage reduction of AlxOy are proposed as a dominant role of the larger program and erase window of 8.3 V which is applicable to the MLC Flash memory device
  • Keywords
    MOSFET; flash memories; nanostructured materials; 8.3 V; AlO; enhanced leakage reduction; flash memory application; high-k blocking oxide; hybrid nanocrystal FinFET; trap density; trap layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070605
  • Filename
    4168508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=821518