Title :
Design of index-guided vertical-cavity lasers for low temperature-sensitivity, sub-milliamp thresholds, and single-mode operation
Author :
Scott, J.W. ; Young, D.B. ; Thibeault, B.J. ; Peters, M.G. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
An improved current-to-light model, including bandgap renormalization, is applied to high-performance vertical-cavity lasers to determine appropriate values for Auger recombination and leakage currents in InGaAs quantum wells. The model is then used to analyze the threshold temperature sensitivity of various cavity designs, showing the design changes needed for broad temperature stability. The practical limits on low-threshold devices are then examined. Finally, a current-apertured design is analyzed in detail, showing stabilized single-mode operation with improved efficiency
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; leakage currents; optical hole burning; quantum well lasers; surface emitting lasers; Auger recombination; InGaAs; InGaAs quantum well; bandgap renormalization; cavity designs; current-apertured design; efficiency; high-performance vertical-cavity laser; index-guided vertical-cavity lasers; leakage currents; low-threshold devices; single-mode operation; stabilized single-mode operation; sub-milliamp thresholds; temperature stability; temperature-sensitivity; threshold temperature sensitivity; Indium gallium arsenide; Laser modes; Leakage current; Optical design; Photonic band gap; Quantum well lasers; Radiative recombination; Stability analysis; Temperature sensors; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401252
