Validity of constant voltage stress based reliability assessment of high-κ devices

Author

Lee, Byoung Hun ; Choi, Rino ; Sim, Jang Hoan (Johnny) ; Krishnan, Siddarth A. ; Peterson, Jeff J. ; Brown, George A. ; Bersuker, Gennadi

Author_Institution

SEMATECH, Austin, TX, USA

Volume

5

Issue

1

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

20

Lastpage

25

Abstract

Charge trapping in high-κ gate dielectrics affects the result of electrical characterization significantly. DC mobility degradation and device threshold voltage instability and C-V and I-V hysteresis are a few examples. The charging effects in high-κ gate dielectric also affect the validity of conventional reliability test methodologies developed for SiO₂ devices. In this paper, we review high-κ materials specific phenomena that can affect the validity of constant-voltage-stress-based reliability test methods to address the direction of future reliability study on high-κ devices.

Keywords

carrier mobility; dielectric devices; dielectric materials; electric breakdown; hot carriers; reliability; C-V hysteresis; DC mobility degradation; I-V hysteresis; SiO₂; bias temperature instability; charge trapping; constant voltage stress; device threshold voltage instability; high-k devices; high-k gate dielectrics; hot-carrier injection; metal gate; reliability assessment; time-dependent dielectric breakdown; Degradation; Dielectric devices; Dielectric materials; Hot carrier injection; Hysteresis; Materials reliability; Materials testing; Pulse measurements; Stress; Threshold voltage; Bias temperature instability (BTI); charge trapping; high-; hot-carrier injection (HCI); metal gate; reliability; time-dependent dielectric breakdown (TDDB);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2005.845807

Filename

1435385