Fast simulated diffusion: an optimization algorithm for multiminimum problems and its application to MOSFET model parameter extraction

Author

Sakurai, Takayasu ; Lin, Bill ; Newton, A. Richard

Author_Institution

Semicond. Divice Eng. Lab., Toshiba Corp., Kawasaki, Japan

Volume

11

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

228

Lastpage

234

Abstract

An optimization method, called fast simulated diffusion (FSD), is proposed to solve a multiminimial optimization problem on multidimensional continuous space. The algorithm performs a greedy search and a random search alternately and can find the global minimum with a practical success rate. An efficient hill-descending method employed as the greedy search in the FSD is proposed. When the FSD is applied to a set of standard test functions, it shows an order of magnitude faster speed than the conventional simulated diffusion. Some of the optimization problems encountered in system and VLSI designs are classified into multioptimal problems. The proposed FSD is successfully applied to a MOSFET parameter extraction problem with a deep submicron MOSFET

Keywords

insulated gate field effect transistors; optimisation; search problems; semiconductor device models; MOSFET; VLSI designs; deep submicron device; fast simulated diffusion; global minimum; greedy search; hill-descending method; model parameter extraction; multidimensional continuous space; multiminimum problems; multioptimal problems; optimization algorithm; random search; Application software; Circuit simulation; Computational modeling; Design optimization; MOSFET circuits; Multidimensional systems; Optimization methods; Parameter extraction; Temperature; Very large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.124401

Filename

124401