Title :
Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact
Author :
Jiang, H. ; Egawa, T. ; Ishikawa, H. ; Dou, Y.B. ; Shao, C.L. ; Jimbo, T.
Author_Institution :
Res. Center for Nano-Devices & Syst., Nagoya Inst. of Technol., Japan
Abstract :
Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Schottky photodiodes. After annealing at 500°C in O2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8×10-10 A/cm2 at -5 V bias. The peak responsivity is 105 mA/W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8×1015 cmHz12/ W-1 at zero bias.
Keywords :
III-V semiconductors; Schottky diodes; annealing; current density; dark conductivity; gallium compounds; photodiodes; semiconductor device metallisation; -5 to -15 V; 1 min; 1.28 eV; 500 degC; GaN; Ir-Ni-Ir-GaN; Schottky UV photodiodes; annealing; current densities; dark current; maximum barrier height; oxidised IrNi Schottky contact; peak responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031039
