A first-order charge conserving MOS capacitance model

Author

Sakallah, Karem A. ; Yen, Yao-Tsung ; Greenberg, Steve S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

9

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

99

Lastpage

108

Abstract

The Meyer capacitance model (see RCA Rev., vol.32, p.42-63, 1971) fails to obey the charge conservation law. It is shown that the charge nonconservation in the Meyer model is not due to any physical assumptions. Rather, it is caused by the mathematical error of characterizing a multidimensional function (the stored charge on the four terminals of a MOSFET) by an incomplete subset of its partial derivatives (the partial derivatives of the gate charge). This conclusion is supported by developing and implementing a correct mathematical characterization of the MOS charges based on the same physical assumptions used in the Meyer model. One important outcome of this exercise is that the nonreciprocal nature of MOS capacitive coupling is evident even in a first-order physical model of the device

Keywords

capacitance; insulated gate field effect transistors; semiconductor device models; MOSFET; Meyer capacitance model; capacitive coupling; charge nonconservation; first-order charge conserving MOS capacitance model; first-order physical model; gate charge; mathematical error; multidimensional function; nonreciprocal nature; partial derivatives; Capacitance; Circuit simulation; Design automation; Differential equations; Lead; MOSFET circuits; Mathematical model; Multidimensional systems; Nonlinear equations; SPICE;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.45860

Filename

45860