Extraction of substrate parameters for RF MOSFETs based on four-port measurement

Author

Wu, Shih-Dao ; Huang, Guo-Wei ; Chen, Kun-Ming ; Chang, Chun-Yen ; Tseng, Hua-Chou ; Hsu, Tsun-Lai

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

15

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

437

Lastpage

439

Abstract

In this work, a new method for extracting substrate parameters of radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs) based on four-port measurement is presented. A T-liked substrate resistance network is used and the values of all components in the cold MOSFETs were extracted directly from the four-port data between 250 MHz and 8.5 GHz. The output admittance Y₂₂ can be well modeled up to 26.5 GHz based on the extracted substrate resistances and the other extrinsic capacitances extracted from an active device.

Keywords

MOSFET; microwave field effect transistors; microwave measurement; multiport networks; semiconductor device measurement; semiconductor device models; 250 MHz to 8.5 GHz; RF MOSFET; T-liked substrate resistance network; cold MOSFET; extrinsic capacitances; four-port measurement; output admittance; radio frequency metal oxide semiconductor field effect transistors; substrate parameter extraction; Capacitance; Data mining; Electrical resistance measurement; Equivalent circuits; FETs; Frequency measurement; Immune system; MOSFETs; Radio frequency; Substrates; Four-port measurement; radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs); substrate resistance;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.850566

Filename

1435449