DocumentCode :
822776
Title :
Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy
Author :
Kobayashi, Ryuji ; Hotta, Hitoshi ; Miyasaka, Fumito ; Hara, Kunihiro ; Kobayashi, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume :
1
Issue :
2
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
723
Lastpage :
727
Abstract :
We establish selective area growth of AlxIn1-x P and develop a high power 685-nm real index-guided AlGaInP visible laser for the first time. This laser has a high-bandgap energy Al0.5In0.5P current blocking layer, which is selectively grown by HCl-assisted metalorganic vapor phase epitaxy (MOVPE). Threshold current is reduced and slope efficiency is improved, compared with conventional lasers with GaAs current blocking layers. The threshold current and slope efficiency for a real index guided AlGaInP laser are 36 mA and 1.0 W/A, with a cavity length of 710 μm. Fundamental transverse mode operation up to 50 mW, and CW operation over 55 mW at 25°C, without any kinks in the light output power versus current curve, are achieved. This laser is operated stably for more than 1000 hours at 30 mW constant output power, at 50°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; laser stability; semiconductor lasers; vapour phase epitaxial growth; 1000 h; 25 C; 30 mW; 36 mA; 50 C; 50 mW; 55 mW; 685 nm; 710 mum; Al0.5In0.5P; AlGaInP; AlInP current blocking layer; CW operation; HCl; HCl-assisted metalorganic vapor phase epitaxy; cavity length; fundamental transverse mode operation; high-bandgap energy; index-guided laser; light output power; selective area growth; slope efficiency; threshold current; visible laser; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gas lasers; Laser modes; Laser stability; Optical refraction; Optical variables control; Power lasers; Threshold current;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.401263
Filename :
401263
Link To Document :
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