Title :
High-reliability MOCVD-grown quantum dot laser
Author :
Sellin, R.L. ; Ribbat, C. ; Bimberg, D. ; Rinner, F. ; Konstanzer, H. ; Kelemen, M.T. ; Mikulla, M.
Author_Institution :
Inst. fur Festkorperphys., Technische Univ. Berlin, Germany
fDate :
8/1/2002 12:00:00 AM
Abstract :
4.7 W continuous-wave (CW) and 11.7 W quasi-CW output power have been demonstrated for laser diodes based on six-fold stacks of InGaAs/GaAs quantum dots. Lifetimes beyond 3000 h at 1.0 and 1.5 W output power and 50°C heatsink temperature were measured. The output power is limited by catastrophic optical mirror damage occurring at 19.5 MW/cm2 on the front facet
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor device reliability; semiconductor quantum dots; vapour phase epitaxial growth; 1 to 11.7 W; 3000 h; 4.7 W; 50 C; CW output power; InGaAs-GaAs; InGaAs/GaAs quantum dots; MOCVD-grown semiconductor laser; continuous-wave output power; front facet; high-reliability laser; optical mirror damage; output power limitation; quantum dot laser; quasi-CW output power; six-fold stacks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020602
