Title :
P-type quantum well infrared photodetectors covering wide spectrum
Author :
Liu, H.C. ; Oogarah, T. ; Dupont, E. ; Wasilewski, Z.R. ; Byloos, M. ; Buchanan, M. ; Szmulowicz, E. ; Ehret, J. ; Brown, G.J.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
8/1/2002 12:00:00 AM
Abstract :
Using a set of p-type GaAs/AlGaAs quantum well infrared photodetectors, a wide spectral coverage is demonstrated. Photoresponses at wavelengths as short as 1.4 μm and as long as 15 μm are shown. The shortest wavelength device with a high Al fraction (95%) peaks at 1.9 μm and covers a range of 1.4 to 3 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; quantum well devices; semiconductor quantum wells; 1.4 to 15 micron; GaAs-AlGaAs; GaAs/AlGaAs quantum well; QWIP; infrared photodetectors; p-type QW IR photodetectors; quantum well photodetectors; wide spectral coverage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020644
