Title :
High performance InP Gunn devices with 34 mW at 193 GHz
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
8/1/2002 12:00:00 AM
Abstract :
InP Gunn devices on diamond heatsinks yielded RF output power levels (and corresponding DC-to-RF conversion efficiencies) of 34 mW (0.74%) and 25 mW (0.55%) at second-harmonic frequencies of 193 and 199 GHz, respectively. The measured phase noise was well below -94 dBc/Hz at an off-carrier frequency of 500 kHz
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; millimetre wave generation; millimetre wave oscillators; 193 GHz; 34 mW; DC-RF conversion efficiencies; G-band frequencies; InP; RF output power levels; diamond heatsinks; free-running oscillators; high performance Gunn devices; operating active-region temperatures; phase noise; reliable long-term operation; second-harmonic frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020612
