Title :
A new empirical nonlinear model for HEMT and MESFET devices
Author :
Angelov, Iltcho ; Zirath, Herbert ; Rosman, N.
Author_Institution :
Dept. of Appl. Electron Phys., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
12/1/1992 12:00:00 AM
Abstract :
A large-signal model for HEMTs and MESFETs, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances, is proposed. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different δ-doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled DC and S-parameters are compared and found to coincide well
Keywords :
S-parameters; Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC parameters; GaAs; HEMT; InP; MESFET; S-parameters; characteristic transconductance; current-voltage characteristic; delta doped pseudomorphic device; empirical nonlinear model; gate-drain capacitances; gate-source capacitance; large-signal model; model parameter extraction; submicron gate-length; Capacitance; Current-voltage characteristics; Gallium arsenide; HEMTs; Indium phosphide; Lattices; MESFETs; PHEMTs; Parameter extraction; Transconductance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
