Title :
An ultra-broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
Author :
Miyashita, Miyo ; Maemura, Kosei ; Yamamoto, Kazuya ; Shimura, Temyuki ; Nogami, Masamichi ; Motoshima, Kuniaki ; Kitayama, Tadayoshi ; Mitsui, Yasuo
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
12/1/1992 12:00:00 AM
Abstract :
An ultra-broadband GaAs MESFET preamplifier IC has been developed for a 10-Gb/s optical communication system. High transimpedance of 44 dBΩ has been obtained over DC to 12 GHz. A receiver has been fabricated by using this preamplifier IC and a photodiode. The receiver operates with extremely low equivalent input noise current of 12.6 pA/√Hz over DC to 7.8 GHz. Circuit design and high-frequency characteristics of both the preamplifier IC and the receiver are described
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital communication systems; field effect integrated circuits; gallium arsenide; linear integrated circuits; optical receivers; preamplifiers; wideband amplifiers; 0 to 7.8 GHz; 10 Gbit/s; 12 GHz; GaAs; MESFET preamplifier IC; high-frequency characteristics; monolithic IC; optical communication system; ultra-broadband; ultrabroadband preamp; Gallium arsenide; Integrated circuit noise; MESFET integrated circuits; Optical fiber communication; Optical noise; Optical receivers; Photodiodes; Photonic integrated circuits; Preamplifiers; Ultraviolet sources;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
