• DocumentCode
    825513
  • Title

    Normal-incidence intersubband absorption in AlGaSb quantum wells: enhanced oscillator strength and new functionalities using asymmetry

  • Author

    Jancu, J.-M. ; Senellart, P. ; Peter, E. ; Berger, V. ; Chevrier, F. ; Joullié, A. ; Alibert, C. ; Krebs, O. ; Voisin, P.

  • Author_Institution
    Scuola Normale Superiore, Pisa, Italy
  • Volume
    150
  • Issue
    4
  • fYear
    2003
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp3 d5 s* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor quantum wells; tight-binding calculations; GaAlSb-AlSb; L-valley GaAlSb-AlSb quantum wells; asymmetric quantum wells; intersubband absorption; midinfrared photodetection; oscillator strength; tight binding model;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20030722
  • Filename
    1245000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=825513