Title :
Memories of tomorrow
Author :
Reohr, William ; Hönigschmid, Heinz ; Robertazzi, Raphael ; Gogl, Dietmar ; Pesavento, Frank ; Lammers, Stefan ; Lewis, Kelvin ; Arndt, Christian ; Lu, Yu ; Viehmann, Hans ; Scheuerlein, Roy ; Wang, Li-kong ; Trouilloud, Philip ; Parkin, Stuart ; Gallaghe
Author_Institution :
IBM/Infineon Technol., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.
Keywords :
magnetic film stores; random-access storage; tunnelling; magnetic random access memory; magnetic tunnel junction memory; memory technology; nonvolatility; read times; write endurance; write times; Anisotropic magnetoresistance; CMOS technology; Current measurement; DC generators; Giant magnetoresistance; Induction generators; Magnetic anisotropy; Magnetic circuits; Magnetic tunneling; Perpendicular magnetic anisotropy;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.2002.1035347
