• DocumentCode
    827261
  • Title

    16 GHz bandwidth MSM photodetector and 45/85 GHz fT/f max HEMT prepared on an identical InGaAs/InP layer structure

  • Author

    Horstmann, M. ; Schimpf, K. ; Marso, M. ; Fox, A. ; Kordos, P.

  • Author_Institution
    Inst. of Thin Film & Ion Technol., Res. Centre Julich
  • Volume
    32
  • Issue
    8
  • fYear
    1996
  • fDate
    4/11/1996 12:00:00 AM
  • Firstpage
    763
  • Lastpage
    764
  • Abstract
    An MSM photodetector and a HEMT prepared on an identical InGaAs/InP layer structure are demonstrated for the first time. A 150 nm undoped InGaAs layer is inserted above the 2 DEG to enhance the photodetector responsivity, and a bandwidth of 16 GHz is achieved. On the same wafer, processed HEMTs show optimal high frequency performance with an fT of 45 GHz and an fmax of 85 GHz. This procedure could be suitable for the preparation of monolithically integrated photoreceivers with high performance and low cost
  • Keywords
    gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; p-i-n photodiodes; photodetectors; two-dimensional electron gas; 16 GHz; 2 DEG; 45 GHz; 85 GHz; HEMT; InGaAs-InP; MSM photodetector; OEIC; photodetector responsivity; undoped InGaAs layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960454
  • Filename
    491077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=827261