DocumentCode
827360
Title
Whatever Happened to Silicon Carbide
Author
Campbell, Robert B.
Author_Institution
Westinghouse Electric Corporation, Pittsburgh, PA 15236.
Issue
2
fYear
1982
fDate
5/1/1982 12:00:00 AM
Firstpage
124
Lastpage
128
Abstract
Silicon carbide has been used extensively as an abrasive, but only in the last 25 years has its potential as a semiconductor been exploited. The rationale for SiC semiconductor devices is their high temperature performance. Rectifiers, field effect transistors, charged particle detectors, and other devices operate efficiently at temperatures about 800 K.
Keywords
Abrasives; Chemicals; Crystals; Etching; Fabrication; Laboratories; Lattices; Rectifiers; Silicon carbide; Temperature;
fLanguage
English
Journal_Title
Industrial Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0278-0046
Type
jour
DOI
10.1109/TIE.1982.356648
Filename
4180377
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