• DocumentCode
    827360
  • Title

    Whatever Happened to Silicon Carbide

  • Author

    Campbell, Robert B.

  • Author_Institution
    Westinghouse Electric Corporation, Pittsburgh, PA 15236.
  • Issue
    2
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    124
  • Lastpage
    128
  • Abstract
    Silicon carbide has been used extensively as an abrasive, but only in the last 25 years has its potential as a semiconductor been exploited. The rationale for SiC semiconductor devices is their high temperature performance. Rectifiers, field effect transistors, charged particle detectors, and other devices operate efficiently at temperatures about 800 K.
  • Keywords
    Abrasives; Chemicals; Crystals; Etching; Fabrication; Laboratories; Lattices; Rectifiers; Silicon carbide; Temperature;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/TIE.1982.356648
  • Filename
    4180377