14xx-nm high brightness tapered diode lasers grown by solid-source MBE

Author

Kallenbach, Senta ; Aidam, Rolf ; Lösch, Rainer ; Kaufel, Gudrun ; Kelemen, Márc Tibor ; Mikulla, Michael ; Weimann, Günter

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

18

Issue

5

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

655

Lastpage

657

Abstract

We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light diffraction; molecular beam epitaxial growth; quantum well lasers; semiconductor device reliability; semiconductor growth; 1 W; 1.6 W; 1470 nm; InGaAsP; InGaAsP diode laser; diffraction-limited output power; high brightness lasers; high-power laser; metal-organic vapor phase epitaxy; reliability tests; solid-source MBE; tapered diode lasers; Brightness; Diode lasers; Epitaxial growth; Molecular beam epitaxial growth; Optical resonators; Optical waveguides; Power generation; Power lasers; Pump lasers; Semiconductor lasers; 14xx; InGaAsP; high brightness; semiconductor lasers; solid-source molecular beam epitaxy (SSMBE);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.870124

Filename

1593721