• DocumentCode
    828087
  • Title

    Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates

  • Author

    Kouvatsos, D.N. ; Tsoukalas, D. ; Sarcona, G.T. ; Hatalis, M.K. ; Stoemenos, J.

  • Author_Institution
    Inst. of Microelectron., NCSR Demokritos, Aghia Paraskevi, Greece
  • Volume
    32
  • Issue
    8
  • fYear
    1996
  • fDate
    4/11/1996 12:00:00 AM
  • Firstpage
    775
  • Lastpage
    777
  • Abstract
    Thin film transistors were fabricated in single crystal silicon films bonded to glass substrates. High electron mobilities were achieved, making integration of the driving circuitry and pixel switching elements on the same glass substrate possible and allowing improved display aperture ratios. These single crystal silicon TFTs are attractive for AMLCD applications
  • Keywords
    MOS integrated circuits; MOSFET; electron mobility; elemental semiconductors; glass; liquid crystal displays; silicon; substrates; thin film transistors; wafer bonding; 600 C; AMLCD applications; Si; active matrix LCD; display aperture ratios; driving circuitry; glass substrates; high electron mobilities; low process temperatures; low temperature processing; pixel switching elements; single crystal Si films; thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960474
  • Filename
    491086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=828087