• DocumentCode
    828462
  • Title

    Comment on "Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels"

  • Author

    Hamel, John S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    49
  • Issue
    10
  • fYear
    2002
  • Firstpage
    1839
  • Lastpage
    1841
  • Abstract
    For original paper see N. Rinaldi, ibid., vol.45, p.1501-10 (1998). In the original paper, the most accurate existing closed-form analytical solutions to the ac minority carrier continuity equation in quasi-neutral regions of bipolar transistors were assessed by way of open-form infinite series solutions. Contrary to the conclusions drawn, the present author argues that, because the closed-form solutions cannot be derived from the open-form solutions, they cannot be viewed as less accurate approximations to the truncated open-form infinite series solutions.
  • Keywords
    bipolar transistors; minority carriers; semiconductor device models; series (mathematics); ac minority carrier continuity equation; arbitrary injection levels; bipolar transistors; closed-form analytical solutions; open-form infinite series solutions; quasi-neutral regions; small-signal minority-carrier transport modeling; truncated open-form infinite series solutions; Bipolar transistors; Charge carrier processes; Semiconductor device modeling; Series (mathematics);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.802138
  • Filename
    1036098