Low-temperature polysilicon TFT with gate oxide grown by high-pressure oxidation

Author

Mitra, U. ; Chen, J. ; Khan, B. ; Stupp, Edward

Author_Institution

Philips Lab., Briarcliff Manor, NY, USA

Volume

12

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

390

Lastpage

392

Abstract

Polysilicon thin-film transistors (TFTs) were fabricated with the maximum processing temperature limited to 650 degrees C. Best results were obtained when the gate oxide was grown by a two-step high-pressure oxidation process, using high-pressure steam and then dry oxygen both at 15 atm and 650 degrees C. The TFTs exhibit a mobility of 34 cm/sup 2//V*s, threshold voltage of 3.5 V, leakage current below 0.01 pA/ mu m, subthreshold slope of 0.18 V/decade, and an ON/OFF ratio of over eight orders of magnitude. These values are comparable to those obtained with conventional polysilicon TFTs using high-temperature thermal oxidation.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; oxidation; silicon; thin film transistors; 15 atm; 3.5 V; 650 degC; gate oxide growth; high-pressure oxidation; high-pressure steam; leakage current; low temperature growth; maximum processing temperature; mobility; polycrystalline Si; polysilicon TFT; thin-film transistors; threshold voltage; Amorphous materials; Annealing; Dielectric substrates; Electric breakdown; Fabrication; Oxidation; Silicon; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.103617

Filename

103617