X-ray imaging camera tube using sputter-deposited CdTe/CdS heterojunction

Author

Tomita, Yasuhiro ; Hatanaka, Yoshinori ; Takabayashi, Toshio ; Kawai, Toshiaki

Author_Institution

Hamamatsu Photonics Co., Shizuoka, Japan

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

315

Lastpage

319

Abstract

CdTe heterojunction devices have been fabricated for the first time by an RF sputter deposition method for application to X-ray imaging sensors. The electrical resistivities of sputter-deposited polycrystalline CdS and CdTe films are greater than 10⁶ Ω-cm and 10⁹ Ω-cm, respectively. The fabricated CdS/CdTe heterojunction sensor shows a good diode characteristic and a high sensitivity to X-ray radiation. An X-ray imaging camera tube consisting of CdS/CdTe heterojunction photoconductive target shows three times larger responsivity to X-rays than the conventional PbO X-ray tube. The dark current density of the device is observed to be lower than 10 nA/cm² at 20 V target voltage at room temperature

Keywords

II-VI semiconductors; X-ray detection and measurement; cadmium compounds; image sensors; photoconducting devices; semiconductor growth; sputter deposition; 10⁶ ohmcm; 10⁹ ohmcm; CdTe-CdS heterojunction; RF sputter deposition; X-ray imaging camera tube; X-ray imaging sensors; dark current density; electrical resistivities; photoconductive target; Cameras; Diodes; Electric resistance; Heterojunctions; Image sensors; Photoconductivity; Radio frequency; Sensor phenomena and characterization; Sputtering; X-ray imaging;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.182507

Filename

182507