Silicon carbide UV photodiodes

Author

Brown, Dale M. ; Downey, Evan T. ; Ghezzo, Mario ; Kretchmer, W. ; Saia, Richard J. ; Liu, Yung S. ; Edmond, John A. ; Gati, George ; Pimbley, Joseph M. ; Schneider, William E.

Author_Institution

General Electric Co., Schenectady, NY, USA

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

325

Lastpage

333

Abstract

SiC photodiodes were fabricated using 6 H single-crystal wafers. These devices have excellent UV responsivity characteristics and very low dark current even at elevated temperatures. The reproducibility is excellent and the characteristics agree with theoretical calculations for different device designs. The advantages of these diodes are that they will operate at high temperatures and are responsive between 200 and 400 nm and not responsive to longer wavelengths because of the wide 3-eV bandgap. The responsivity at 270 nm is between 70% and 85%. Dark-current levels have been measured as a function of temperature that are orders of magnitude below those previously reported. Thus, these diodes can be expected to have excellent performance characteristics for detection of low light level UV even at elevated temperatures

Keywords

leakage currents; photodiodes; semiconductor materials; short-circuit currents; silicon compounds; ultraviolet detectors; 200 to 400 nm; 6H epitaxial layers; SiC photodiodes; UV responsivity characteristics; low dark current; low light level UV detection; quantum efficiency; reproducibility; reverse current leakage; short circuit output current; Artificial intelligence; Crystallization; Dark current; Diodes; Epitaxial layers; Photodiodes; Photonic band gap; Silicon carbide; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.182509

Filename

182509