An a-Si:H photoconductive sensor with a gate electrode

Author

Takayama, Satoshi ; Mori, Ken-Ichi ; Suzuki, Kouhei ; Tanuma, Chiaki

Author_Institution

Toshiba R&D Center, Kawasaki, Japan

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

342

Lastpage

347

Abstract

A hydrogenated amorphous silicon photoconductive sensor with a gate electrode is developed for a matrix-driven linear image sensor array. The photoresponse time for this new sensor is about 1/3 of that for a conventional photoconductive sensor. A new dynamic model is proposed to analyze the photoresponse characteristics for this sensor. The minimum photoresponse time predicted by the calculation is about 2 ms. This value is markedly short compared with that for a conventional photoconductive sensor (about 5 ms)

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; image sensors; photoconducting devices; photodetectors; semiconductor device models; silicon; 2 ms; amorphous Si:H photoconductive sensor; dynamic model; gate electrode; interface space charge approximation; matrix-driven linear image sensor array; photoresponse time; Chemical sensors; Conductive films; Electrodes; Image sensors; Photoconductivity; Sensor arrays; Sensor phenomena and characterization; Thin film circuits; Thin film sensors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.182511

Filename

182511