DocumentCode :
829090
Title :
A new contact plug technique for deep-submicrometer ULSI is employing selective nickel silcidation of polysilicon with a titanium nitride stopper
Author :
Iijima, Tadashi ; Nishiyama, Akira ; Ushiku, Yukihiro ; Ohguro, Tatsuya ; Kunishima, Iwao ; Suguro, Kyoichi ; Iwai, Hiroshi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Volume :
40
Issue :
2
fYear :
1993
fDate :
2/1/1993 12:00:00 AM
Firstpage :
371
Lastpage :
377
Abstract :
A contact plug technique employing selective nickel silicidation of polysilicon with a titanium nitride barrier layer has been developed. This technique provides a contact resistance equal to that of an unplugged metal contact, while also realizing the flatness of a polysilicon plug over contact regions. Using this technique, a completely silicided plug for both shallow and deep contact holes can be achieved at the same time. The structure of the plug was analyzed using TEM photography, EDX, and electro-diffraction measurements, and the silicidation stopping ability of the TiN layer was confirmed. The low leakage current of junction diodes and lack of transistor characteristic degradation when using the Ni silicided plug are demonstrations of the integrity of this technique. The results indicate that this technology is suitable for deep-submicrometer ULSIs
Keywords :
VLSI; X-ray chemical analysis; contact resistance; metallisation; nickel compounds; titanium compounds; transmission electron microscope examination of materials; EDX; Ni3Si-TiN-Si; TEM photography; barrier layer; completely silicided plug; contact plug technique; contact resistance; deep contact holes; deep-submicrometer ULSI; electro-diffraction; junction diodes; low leakage current; polysilicon; selective silicidation; shallow contact holes; silicidation stopping ability; Contact resistance; Diodes; Leakage current; Nickel; Photography; Plugs; Silicidation; Tin; Titanium; Ultra large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.182516
Filename :
182516
Link To Document :
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