Title :
Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance
Author :
Lips, K. ; Boehme, C. ; Fuhs, W.
Abstract :
A review of recombination in silicon thin-film solar cells studied by means of electrically detected magnetic resonance (EDMR) is presented. It is shown that the EDMR results in μc-Si:H p-i-n solar cells can be described by a simple diffusion model that was developed for crystalline silicon p-n junctions assuming that recombination is dominated by dangling bonds in the space charge region. The results are compared to a-Si:H p-i-n cells and discussed in a recombination model involving the excited states of charged dangling bonds
Keywords :
dangling bonds <Si thin-film solar cells, recomb.>; electron-hole recombination <Si thin-film solar cells, recomb.>; elemental semiconductors <Si thin-film solar cells, recomb.>; semiconductor device models <Si thin-film solar cells, recomb.>; silicon <thin-film solar cells, recomb.>; solar cells <Si thin-film solar cells, recomb.>; space charge <Si thin-film solar cells, recomb.>; thin film devices <Si thin-film solar cells, recomb.>; Si; Si thin-film solar cells; charged dangling bonds; diffusion model; electrically detected magnetic resonance; excited states; recombination model; space charge region;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20030578
