1/f noise in hydrogenated amorphous silicon-germanium alloys

Author

Johanson, R.E. ; Günes, M. ; Kasap, S.O.

Author_Institution

Dept. of Electr. Eng., Univ. of Saskatchewan, Saskatoon, Sask., Canada

Volume

150

Issue

4

fYear

2003

Abstract

Measurements were made of conductance noise of a-Si:H and a-Si_1-xGe_x:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples

Keywords

1/f noise <hydrogenated amorph. Si-Ge alloys, 1/f noise>; Ge-Si alloys <hydrogenated amorph. Si-Ge alloys, 1/f noise>; semiconductor device noise <hydrogenated amorph. Si-Ge alloys, 1/f noise>; semiconductor materials <hydrogenated amorph. Si-Ge alloys, 1/f noise>; solar cells <hydrogenated amorph. Si-Ge alloys, 1/f noise>; 1/f noise; Si:H; Si_1-xGe_x:H; a-Si:H; a-Si_1-xGe_x:H; conductance noise; double power law spectra; longitudinal current flow; noise magnitude; sample resistance; temperature trends; transverse current flow;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20030749

Filename

1245976