• DocumentCode
    830572
  • Title

    Single-Electron Devices With Input Discretizer

  • Author

    Mizugaki, Yoshinao ; Takiguchi, Masashi ; Hayami, Shota ; Kawai, Akio ; Moriya, Masataka ; Usami, Kouichi ; Kobayashi, Tadayuki ; Shimada, Hiroshi

  • Author_Institution
    Dept. of Electron. Eng., Electro-Commun. Univ., Tokyo
  • Volume
    7
  • Issue
    5
  • fYear
    2008
  • Firstpage
    601
  • Lastpage
    606
  • Abstract
    We propose an input discretizer for single-electron (SE) devices. The input discretizer is composed of one small tunnel junction and two capacitances. Adjusting the capacitances to be equal discretizes the gate charge with interval of a half of the elementary charge e, which enhances the performance of SE devices. An SE transistor with the input discretizer has abrupt switchings of the Coulomb blockade thresholds, resulting in steep responses to the input signal. An SE turnstile with the input discretizer enhances its operation margins for the application of a digital-to-analog converter element. Both analytical and numerical results are presented.
  • Keywords
    Coulomb blockade; digital-analogue conversion; single electron transistors; Coulomb blockade thresholds; SE transistor; SE turnstile; digital-to-analog converter element; elementary charge; gate charge; input discretizer; single-electron devices; tunnel junction; Coulomb blockade (CB); Monte Carlo method; SE transistor; SE turnstile; single-electron (SE) box;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2008.2003352
  • Filename
    4595669