Monolithic Integration of CMOS VLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications

Author

Akinwande, Deji ; Yasuda, Shinichi ; Paul, Bipul ; Fujita, Shinobu ; Close, Gael ; Wong, H. S Philip

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA

Volume

7

Issue

5

fYear

2008

Firstpage

636

Lastpage

639

Abstract

We integrate carbon nanotube (CNT) fabrication with standard commercial CMOS very large scale integration on a single substrate suitable for emerging hybrid nanotechnology applications. This cointegration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing. We demonstrate the successful cointegration on a single chip with a vehicle circuit, a two-transistor cascode megahertz amplifier utilizing both silicon n-channel MOSFET and CNT transistors with a total power consumption of 62.5 muW.

Keywords

CMOS analogue integrated circuits; HF amplifiers; VLSI; carbon nanotubes; elemental semiconductors; hybrid integrated circuits; low-power electronics; monolithic integrated circuits; nanoelectronics; radiofrequency integrated circuits; silicon; C; CMOS VLSI; Si; analog circuits; carbon nanotubes; carbon nanotubes transistors; hybrid nanotechnology applications; monolithic integration; power 62.5 muW; silicon n-channel MOSFET; single chip cointegration process; total power consumption; two-transistor cascode megahertz amplifier; vehicle circuit; very large scale integration; Analog circuits; carbon nanotubes (CNTs); cascode amplifier; monolithic integration;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2008.2003438

Filename

4595671