• DocumentCode
    830998
  • Title

    Submicrometre silicon permeable base transistors with buried CoSi2 gates

  • Author

    Schuppen, A. ; Vescan, L. ; Marso, M. ; Hart, A.v.d. ; Luth, H. ; Beneking, H.

  • Author_Institution
    Inst. fur Schicht und Ionentechnik, Forschungszentrum Julich, Germany
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    215
  • Lastpage
    217
  • Abstract
    Silicon permeable base transistors (PBTs) with monocrystalline buried CoSi2 gates have been fabricated by local high dose cobalt ion implantation through a grid-like mask into epitaxial Si
  • Keywords
    Schottky gate field effect transistors; cobalt compounds; elemental semiconductors; ion implantation; semiconductor device models; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; DC characteristics; Si-CoSi 2; grating periodicity; grid-like mask; ion implantation; low-pressure vapour phase epitaxy; maximum transconductance; negative gate voltages; permeable base transistors; pinchoff; transit frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930146
  • Filename
    184593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830998